High current densities cause localized thermal changes in FinFETs.
Sub-threshold and gate-oxide tunneling leakage dominate power consumption.
Connects multiple device models to simulate systems. 🛠️ Core Semiconductor Models in SPICE semiconductor device modeling with spice
Geometric tolerances require Monte Carlo statistical modeling.
A simulator is only as accurate as the data it is fed. While SPICE provides the mathematical engine to solve Kirchhoff’s laws (conservation of charge and energy), it relies on to describe the individual components (transistors, diodes, resistors). High current densities cause localized thermal changes in
Detailed mathematical equations for
Industry standard for deep sub-micron planar bulk CMOS. Carrier mobility decreases as temperature rises
* Diode Model Definition .MODEL MyDiode D (IS=1e-14 RS=0.1 N=1.05 CJO=2pF) * Sub-micron NMOS Model Instance .MODEL nmos_nominal NMOS (LEVEL=54 TNOM=27 VTH0=0.7 TOXE=2nm) Use code with caution.
Semiconductor properties change drastically with temperature. Carrier mobility decreases as temperature rises, and threshold voltage shifts. SPICE models contain temperature coefficients to simulate circuit behavior in environments ranging from freezing arctic conditions to the hot interior of a running car engine.
SPICE allows engineers to mathematically predict the behavior of a circuit before it is physically built. It does this by solving sets of nonlinear differential equations that describe the circuit's voltage and current characteristics.